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Description
The SI6924EDQ-T1 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management applications. It features a wide range of gate drive voltage (2.5V – 12V) and has been optimized using Fairchild Semiconductor's advanced PowerTrench process.
Specifications and features
- Product Category: IC Chips
- Channel Type: N-Channel
- Maximum Current Rating: 5.5 A
- Maximum Voltage Rating: 20 V
- RDS(ON) = 0.021 Ω @ VGS = 4.5 V; RDS(ON) = 0.035 Ω @ VGS = 2.5 V
- Extended VGSS range (±12V) for battery applications
- Low gate charge
- High-performance trench technology for extremely low RDS(ON)
- Low profile TSSOP-8 package
Application Scenarios
The SI6924EDQ-T1 MOSFET is commonly used in power management applications such as load switches, motor drives, DC/DC conversion, and more.
Comparison
Advantages- Wide range of gate drive voltage
- Extended VGSS range for battery applications
- Low gate charge
- Low profile TSSOP-8 package
Disadvantages- May not be suitable for applications with higher current or voltage requirements
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Additional Information
- Datasheet: Download SI6924EDQ-T1
- Chipdatas Part: CD89-SI6924EDQ-T1
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/07/02 08:17 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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