FRGB1313FE-17-TR - Brand New STANLEY IC Chips
In Stock:730 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
730,
Ready for Immediate Shipping
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Description
The FRGB1313FE-17-TR is a high voltage N-Channel enhancement mode power MOSFET. It is part of the Power MOS V® series, which is known for minimizing the JFET effect, increasing packing density, and reducing on-resistance. This model also achieves faster switching speeds through an optimized gate layout.
Specifications and features
- Product Category: IC Chips
- Package Type: TO-247 or Surface Mount D3PAK
- Avalanche Energy Rated
- FAST RECOVERY BODY DIODE
Application Scenarios
The FRGB1313FE-17-TR can be used in various electronic applications that require high voltage power MOSFETs. It is suitable for use in devices that need fast switching speeds and low leakage.
Comparison
Advantages- Minimized JFET effect
- Increased packing density
- Reduced on-resistance
- Optimized gate layout for faster switching
DisadvantagesNo specific disadvantages have been identified for this model.
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
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Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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How to Buy:
- - In-stock, Add to cart > Check out > Submit order > Complete payment >Delivery.
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Additional Information
- Datasheet: Download FRGB1313FE-17-TR
- Chipdatas Part: CD93-FRGB1313FE-17-TR
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 16:15 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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Payment Method
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The fee is charged according to the rule of PayPal.
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