MBM29DL324TE-90PFTN - Brand New FUJITSU IC Chips
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Description
The MBM29DL324TE-90PFTN is a 32M-bit flash memory component that operates at a voltage of 3.0V. It is designed to be programmed in-system using a standard 3.0V VCC supply, eliminating the need for a 12.0V VPP and 5.0V VCC. The device can also be reprogrammed using EPROM programmers. With a 0.23 µm process technology, it offers simultaneous read/write operations with multiple devices available in different bank sizes. The component has a single 3.0V read, program, and erase operation, minimizing power requirements. It is compatible with JEDEC-standard commands and pinouts, making it easy to integrate into existing systems. The MBM29DL324TE-90PFTN has a minimum 100,000 program/erase cycles and provides high performance with a maximum access time of 80 ns. Its sector erase architecture allows for concurrent erasure of multiple sectors. The component also features a boot code sector architecture and a hidden ROM region for added security. It has a WP/ACC input pin for protecting boot sectors and increasing program performance. Additional features include embedded erase and program algorithms, data polling and toggle bit feature, ready/busy output for cycle completion detection, automatic sleep mode for low power consumption, low VCC write inhibit, erase suspend/resume functionality, and sector group protection options.
Specifications and features
- 32M-bit Flash memory
- Operating voltage: 3.0V
- Programmable in-system with 3.0V VCC supply
- No 12.0V VPP or 5.0V VCC required
- Can be reprogrammed using EPROM programmers
- 0.23 µm process technology
- Simultaneous read/write operations
- Single 3.0V read, program, and erase
- Compatible with JEDEC-standard commands and pinouts
- Minimum 100,000 program/erase cycles
- High performance with 80 ns maximum access time
- Sector erase architecture
- Boot code sector architecture
- Hidden ROM region for secure electronic serial number
- WP/ACC input pin for boot sector protection and program performance
- Embedded erase and program algorithms
- Data polling and toggle bit feature for cycle completion detection
- Ready/Busy output for cycle completion detection
- Automatic sleep mode for low power consumption
- Low VCC write inhibit
- Erase suspend/resume functionality
- Sector group protection options
Application Scenarios
The MBM29DL324TE-90PFTN flash memory component is commonly used in electronic devices that require non-volatile memory for storing data. It is ideal for products that need to retain information even when power is turned off, such as computer BIOS, gaming consoles, and industrial control systems. The flash memory's compatibility with JEDEC-standard commands and pinouts makes it easy to integrate into various systems and applications.
Comparison
Advantages- 3.0V-only operation eliminates the need for 12.0V VPP and 5.0V VCC
- Can be programmed in-system with standard 3.0V VCC supply
- Compatible with JEDEC-standard commands and pinouts for easy integration
- High performance with 80 ns maximum access time
- Sector erase architecture allows for concurrent erasure of multiple sectors
- Embedded erase and program algorithms for efficient programming and erasing
- Secure hidden ROM region for storing electronic serial numbers
Disadvantages- Requires external EPROM programmers for reprogramming
- Sector group protection options may limit certain operations
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
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- Datasheet: Download MBM29DL324TE-90PFTN
- Chipdatas Part: CD89-MBM29DL324TE-90PFTN
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 17:01 +0800
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- Full or Partial Refund , If the item is not as described
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