NAND32GAH0HZA5E - Brand New Numonyx IC Chips
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Description
The NAND32GAH0HZA5E is a non-volatile Flash memory device that belongs to the family of Small Page NAND Flash memories. It uses the Single Level Cell (SLC) NAND cell technology and is available in different densities ranging from 128Mbits to 1Gbit. The NAND32GAH0HZA5E operates with either a 1.8V or 3V voltage supply. The interface of this device is multiplexed with the Data Input/Output signals on a multiplexed x8 or x16 Input/Output bus, which helps in reducing the pin count and allows for easy migration to other densities without changing the footprint.
Specifications and features
- High density NAND Flash memories
- Up to 1 Gbit memory array
- Up to 32 Mbit spare area
- Cost-effective solutions for mass storage applications
- NAND interface with x8 or x16 bus width
- Multiplexed Address/Data
- Pinout compatibility for all densities
- Operating supply voltage of 1.8V or 3.0V
- Page size of 512 Bytes (x8 device) or 256 Words (x16 device)
- Block size of 16K Bytes (x8 device) or 8K Words (x16 device)
- Fast page read/program access time
- Copy back program mode for fast page copy
- Fast block erase time
- Status register and electronic signature support
- Chip enable 'don't care' option for simple interface with microcontroller
- Serial number option
- Hardware data protection during power transitions
- High data integrity with 100,000 Program/Erase cycles and 10 years data retention
- RoHS compliance with lead-free components
- Development tools including error correction code software/hardware models, bad blocks management and wear leveling algorithms, file system OS native reference software, and hardware simulation modelsApplication Scenarios
The NAND32GAH0HZA5E is suitable for a wide range of applications including mass storage, data retention, and data integrity requirements. It can be used in devices such as solid-state drives, flash memory cards, USB drives, embedded systems, and more. The high density and cost-effective nature of the NAND32GAH0HZA5E make it ideal for applications that require large amounts of non-volatile storage in a compact form factor.
Comparison
Advantages- High density memory array up to 1 Gbit
- Cost-effective solution for mass storage applications
- Fast page read/program and block erase times
- Support for various development tools
- RoHS compliance with lead-free componentsDisadvantages- Limited memory array sizes (up to 1 Gbit)
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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Popular parts of the same kind
- Datasheet: Download NAND32GAH0HZA5E
- Chipdatas Part: CD93-NAND32GAH0HZA5E
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 16:29 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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