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Description
This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. It offers high-speed random access of memory cells within the same row, known as Hyper Page Mode. It supports a power supply voltage of either +5.0V or +3.3V, refresh cycle options of 2K Ref. or 4K Ref., access time options of -50 or -60, power consumption options of Normal or Low power, and two package types: SOJ or TSOP-II. All models in this family feature CAS-before-RAS refresh, RAS-only refresh, and Hidden refresh capabilities. The L-version also supports Self-refresh operation. These 2Mx8 EDO Mode DRAMs are fabricated using Samsung's advanced CMOS process, ensuring high bandwidth, low power consumption, and high reliability. They can be used as graphic memory units for microcomputers and personal computers.
Specifications and features
- Part Identification
- K4E170811D-B(F) (5V, 4K Ref.)
- K4E160811D-B(F) (5V, 2K Ref.)
- K4E170812D-B(F) (3.3V, 4K Ref.)
- K4E160812D-B(F) (3.3V, 2K Ref.)
- Active Power Dissipation
- Refresh Cycles
- Performance Range
- Extended Data Out Mode operation (Fast page mode with Extended Data Out)
- CAS-before-RAS refresh capability
- RAS-only and Hidden refresh capability
- Self-refresh capability (L-ver only)
- Fast parallel test mode capability
- TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
- Early Write or output enable controlled write
- JEDEC Standard pinout
- Available in Plastic SOJ and TSOP(II) packages
- Single +5V±10% power supply (5V product)
- Single +3.3V±0.3V power supply (3.3V product)
Application Scenarios
These 2,097,152 x 8 bit Extended Data Out CMOS DRAMs can be applied as graphic memory units for microcomputers and personal computers.
Comparison
Advantages- High-speed random access of memory cells within the same row
- Various optional features: power supply voltage, refresh cycle, access time, power consumption, and package type
- CAS-before-RAS refresh, RAS-only refresh, and Hidden refresh capabilities
- Self-refresh operation available in L-version
- Fabricated using Samsung's advanced CMOS process for high bandwidth, low power consumption, and high reliability
Disadvantages- Not specified
- Part Identification
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Popular parts of the same kind
- Datasheet: Download K4E160812D-FC50
- Chipdatas Part: CD90-K4E160812D-FC50
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/06 15:01 +0800
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