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Description
The NDH8503N is an N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This transistor is designed for low voltage applications, such as notebook computer power management and other battery powered circuits where fast switching and low in-line power loss are required, all in a small surface mount package.
Specifications and Features
- Product Category: IC Chips
- Package Type: SuperSOTTM-8
- Number of Channels: Single
- Continuous Drain Current: 3.8 A
- Operating Voltage: 30 V
- On-State Resistance (RDS(ON)): 0.033 Ω at VGS = 10 V, 0.05 Ω at VGS = 4.5 V
- Features:
- Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
- High density cell design for extremely low RDS(ON).
- Exceptional on-resistance and maximum DC current capability.
Application Scenarios
The NDH8503N transistor is ideal for low voltage applications that require a fast switch and low in-line power loss. Specifically, it can be used for notebook computer power management and other battery-powered circuits.
Comparison
Advantages- High cell density process tailored to minimize on-state resistance
- Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities
- High density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Disadvantages- Designed for low voltage applications only
- Number of channels is limited to a single channel, so it cannot be used for multi-channel applications
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Datasheet
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Additional Information
- Datasheet: Download NDH8503N
- Chipdatas Part: CD92-NDH8503N
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/14 05:30 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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