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RD28F6408W30B70 - Brand New Intel IC Chips - Datasheet - Chipdatas

RD28F6408W30B70 - Brand New Intel IC Chips

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In Stock: 558, Ready for Immediate Shipping
Brand:Intel
Category:IC Chips
Chipdatas Part No.:CD89-RD28F6408W30B70
Manufacturer Part No.:RD28F6408W30B70
Datecode:09+
Package:BGA
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  • Description

    The RD28F6408W30B70 is an electronic component model categorized under IC chips. The device combines flash memory and SRAM in a single package, making it ideal and secure for low-voltage memory solutions used in portable applications. The flash memory is designed to provide improved security, zero-latency instant locking and unlocking of any flash block, a 128-bit protection register for unique device identification, and improved 12V production programming for increased throughput.

    Specifications and features

    • Flash Memory Plus SRAM: Reduces Memory Board Space Required, Simplifying PCB Design Complexity
    • SCSP Technology: Smallest Memory Subsystem Footprint, Area: 8 x 10 mm for 16 Mbit (0.13 µm) Flash + 2 Mbit or 4 Mbit SRAM. Area: 8 x 12 mm for 32 Mbit (0.13 µm) Flash + 4 Mbit or 8 Mbit SRAM. Height: 1.20 mm for 16 Mbit (0.13 µm) Flash + 2 Mbit or 4 Mbit SRAM, and 32 Mbit (0.13 µm) Flash + 8 Mbit SRAM. Height: 1.40 mm for 32 Mbit (0.13 µm) Flash + 4 Mbit SRAM. This family also includes 0.25 µm, 0.18 µm, and 0.13 µm technologies.
    • Advanced SRAM Technology: 70 ns Access Time, Low Power Operation, Low Voltage Data Retention Mode
    • Intel® Flash Data Integrator (FDI) Software: Real-Time Data Storage and Code Execution in the Same Memory Device, Full Flash File Manager Capability
    • Advanced+ Boot Block Flash Memory: 70 ns Access Time, Instant, Individual Block Locking, 128 bit Protection Register, 12 V Production Programming, Fast Program and Erase Suspend, Extended Temperature –25 °C to +85 °C
    • Blocking Architecture: Block Sizes for Code + Data Storage, 4-Kword Parameter Blocks, 64-Kbyte Main Blocks, 100,000 Erase Cycles per Block
    • Low Power Operation: Asynchronous Read Current: 9 mA (Flash), Standby Current: 7 µA (Flash), Automatic Power Saving Mode
    • Flash Technologies: 0.25 µm ETOX™ VI, 0.18 µm ETOX™ VII and 0.13 µm ETOX™ VIII Flash Technologies

    Application Scenarios

    The RD28F6408W30B70 can be used in portable applications that require low-voltage memory solutions such as flash memory and SRAM. This device provides enhanced security features and low power operation suitable for portable devices, mobile phones, digital cameras among others.

    Comparison

    Advantages
    • Enhanced security features to ensure data privacy and confidentiality
    • Low power operation and automatic power-saving mode reduce power consumption
    • Small-sized package that saves space on the memory board and simplifies PCB design complexity
    • Instant locking/unlocking of any flash block with zero-latency
    • 128-bit protection register enables unique device identification
    Disadvantages
    • The device works only on a limited range of temperatures, with an extended temperature range of -25 °C to +85 °C, which may limit its use to specific applications only
    • Not suitable for high power-consuming applications
  • Similar parts: 430483 , Click to view
    Attributes Value
    Category IC Chips
    Manufacturer INTEL
    Product Category IC Chips
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download RD28F6408W30B70
  • Chipdatas Part: CD89-RD28F6408W30B70
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/30 18:20 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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