TH50VSF3581AASB - Brand New TOSHIBA IC Chips
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Description
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
The TH50VSF3581AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply for the TH50VSF3581AASB can range from 2.7 V to 3.6 V. The TH50VSF3581AASB can perform simultaneous read/write operations on its flash memory and is available in a 69-pin BGA package, making it suitable for a variety of applications.
Specifications and features
• Power supply voltage
VCCs = 2.7 V~3.6 V
VCCf = 2.7 V~3.6 V
• Data retention supply voltage
VCCs = 1.5 V~3.6 V
• Current consumption
Operating: 45 mA maximum (CMOS level)
Standby: 7 µA maximum (SRAM CMOS level)
Standby: 10 µA maximum (flash CMOS level)
• Block erase architecture for flash memory
8 blocks of 8 Kbytes
63 blocks of 64 Kbytes
• Function mode control for flash memory
Compatible with JEDEC-standard commands
• Flash memory functions
Simultaneous Read/Write operations
Auto-Program
Auto Chip Erase, Auto Block Erase
Auto Multiple-Block Erase
Program Suspend/Resume
Block-Erase Suspend/Resume
Data Polling / Toggle Bit function
Block Protection / Boot Block Protection
Support for automatic sleep and hidden ROM area
Common flash memory interface (CFI)
Byte/Word Modes
• Erase and Program cycles for flash memory
105 cycles (typical)
• Boot block architecture for flash memory
TH50VSF3581AASB: Top boot block
• Package
P-FBGA69-1209-0.80A3: 0.31 g (typ.)Application Scenarios
The TH50VSF3581AASB mixed multi-chip package can be used in various applications that require both SRAM and flash memory. Its simultaneous read/write operation on the flash memory makes it suitable for applications that require frequent data updates and storage, such as data logging systems, embedded systems, and industrial control systems.
Comparison
Advantages- Contains both SRAM and flash memory in one package
- Simultaneous read/write operations on flash memory
- Wide power supply range
- Suitable for a variety of applications
Disadvantages- Limited storage capacity compared to dedicated SRAM or flash memory chips
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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Popular parts of the same kind
- Datasheet: Download TH50VSF3581AASB
- Chipdatas Part: CD94-TH50VSF3581AASB
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 12:31 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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