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NSS40301MDR2G - Brand New onsemi Transistors (BJT) - Arrays - Datasheet - Chipdatas
NSS40301MDR2G
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NSS40301MDR2G - Brand New onsemi Transistors (BJT) - Arrays

In Stock:83704 ,Ready for Immediate Shipping
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In Stock: 83704, Ready for Immediate Shipping
Brand:onsemi
Category:Transistors (BJT) - Arrays
Chipdatas Part No.:CD93-NSS40301MDR2G
Manufacturer Part No.:NSS40301MDR2G
Datecode:09+
Package:8-SOIC 0.154", 3.90mm Width
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  • Description

    Dual Matched 40 V, 6.0 A, Low VCE(sat) NPN Transistor

    These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low saturation voltage VCE(sat), high current gain and Base/Emitter turn on voltage. Typical applications are current mirrors, differential amplifiers, DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry, they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

    Specifications and features

    • Current Gain Matching to 10%
    • Base Emitter Voltage Matched to 2 mV
    • This is a Pb−Free Device

    Application Scenarios

    Typical applications: current mirrors, differential amplifiers, DC−DC converters, power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, MP3 players, low voltage motor controls in mass storage products such as disc drives and tape drives, air bag deployment and instrument cluster in the automotive industry.

    Comparison

    Advantages

    - Dual matched for highly matched parameters

    Disadvantages

    - None mentioned

  • Similar parts: 863 , Click to view
    Attributes Value
    Category Transistors (BJT) - Arrays
    Manufacturer onsemi
    Product Category Transistors (BJT) - Arrays
    Series NSS40301MD
    Packaging Tape & Reel (TR)
    Unit-Weight 0.005044 oz
    Mounting-Style SMD/SMT
    Package-Case 8-SOIC (0.154", 3.90mm Width)
    Mounting-Type Surface Mount
    Supplier-Device-Package 8-SOIC
    Configuration Dual
    Power-Max 653mW
    Transistor-Type 2 NPN (Dual)
    Electric current collectors 3A
    Voltage-Collector-Emitter-Breakdown-Max 40V
    DC-Current-Gain-hFE-Min-Ic-Vce 180 @ 1A, 2V
    Vce saturation 115mV @ 200mA, 2A
    Current-Collector-Cutoff-Max 100nA (ICBO)
    Frequency-Transition 100MHz
    Pd-Power-Dissipation 783 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Collector-Emitter-Voltage-VCEO-Max 40 V
    Transistor-Polarity NPN
    Collector-Base-Voltage-VCBO 40 V
    Emitter-Base-Voltage-VEBO 6 V
    Maximum-DC-Collector-Current 3 A
    Gain-Bandwidth-Product-fT 100 MHz
    DC-Collector-Base-Gain-hfe-Min 200 at 10 mA at 2 V 200 at 500 mA at 2 V 180 at 1 A at 2 V 180 at 2 A at 2 V
    DC-Current-Gain-hFE-Max 200 at 10 mA at 2 V
  • Datasheet
    Not found or temporary maintenance
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    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download NSS40301MDR2G
  • Chipdatas Part: CD93-NSS40301MDR2G
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 16:33 +0800
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