E5108AGBG-QT-E 3S - Brand New ELPIDA IC Chips
In Stock:1021 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
1021,
Ready for Immediate Shipping
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Description
The E5108AGBG-QT-E 3S is a 512M bits DDR-II SDRAM component organized as 16,777,216 words × 8 bits × 4 banks. It is packaged in a 64-ball µBGA® package.
Specifications and features
- 1.8V power supply
- Double-data-rate architecture: two data transfers per clock cycle
- Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver
- DQS is edge aligned with data for READs: center aligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK transitions
- Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS
- Four internal banks for concurrent operation
- Data mask (DM) for write data
- Burst lengths: 4, 8
- /CAS Latency (CL): 3, 4, 5
- Auto precharge operation for each burst access
- Auto refresh and self-refresh modes
- 7.8µs average periodic refresh interval
- 1.8V (SSTL_18 compatible) I/O
- Posted CAS by programmable additive latency for better command and data bus efficiency
- Off-Chip-Driver Impedance Adjustment and On-Die Termination for better signal quality
- Programmable RDQS, /RDQS output for making × 8 organization compatible to × 4 organization
- /DQS, (/RDQS) can be disabled for single-ended Data Strobe operation.
- µBGA package is lead-free solder (Sn-Ag-Cu)
Application Scenarios
The E5108AGBG-QT-E 3S can be used in various electronic devices and systems that require DDR-II SDRAM for data storage and processing.
Comparison
Advantages- 1.8V power supply for energy efficiency
- Double-data-rate architecture for faster data transfer
- Bi-directional, differential data strobe for accurate data capture
- Four internal banks for concurrent operation
- Auto precharge operation for efficient memory access
- Auto refresh and self-refresh modes for improved memory management
- Programmable RDQS and /RDQS outputs for compatibility with different memory organizations
- Off-Chip-Driver Impedance Adjustment and On-Die Termination for better signal quality
- Lead-free solder for environmental friendliness
Disadvantages- Limited burst lengths: 4 and 8
- Limited /CAS Latency options: 3, 4, and 5
- /DQS and (/RDQS) can be disabled for single-ended Data Strobe operation, limiting certain functionalities.
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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Additional Information
- Datasheet: Download E5108AGBG-QT-E 3S
- Chipdatas Part: CD89-E5108AGBG-QT-E 3S
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/13 00:19 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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