Description

The AWT6625R is an IC chip module designed for high power, high efficiency amplifier applications in Dual Mode CDMA/AMPS wireless handset products. The module is manufactured using advanced InGaP HBT MMIC technology to provide state-of-the-art reliability, temperature stability, and ruggedness. The 6mm x 6mm self-contained laminate package incorporates 50W input and output matching networks that are optimized for output power, linearity, and efficiency. The module also features low power quiescent current mode that is digitally controlled to reduce power drain on the system battery.

Specifications and Features

• InGaP HBT Technology
• High Efficiency 45% AMPS and 35% CDMA
• Low Leakage Current (<5mA)
• SMT Module Package
• Small Foot Print (6mm x 6mm)
• Low Profile (1.5mm)
• 50 W Input and Output Matching
• Low Quiescent Current (Icq = 50mA Typ)
• Shut Down and Mode Control
• CDMA 2000 1XRTT Compliant

Application Scenarios

This IC chip module is most commonly used in Dual Mode AMPS/CDMA wireless handset products.

Comparison

• Uses advanced InGaP HBT MMIC technology for state-of-the-art reliability, temperature stability, and ruggedness.
• Features a small footprint package that incorporates 50W input and output matching networks optimized for output power, linearity, and efficiency.
• Designed with low power quiescent current mode, which is digitally controlled to reduce power drain on the system battery.
• CDMA 2000 1XRTT compliant.

• This IC chip module is designed for specific high power applications and may not be suitable for other wireless handset designs.
• The features and specifications may not be suitable for certain CDMA/AMPS wireless handset designs that require different performance characteristics.