Description

The 29F200TA-90FTN is a non-volatile memory chip that belongs to the IC Chips product category. It is designed for use in electronic devices that require programmable memory. With a 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS, it offers a fast access time of 55ns. The device can be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCC supply. The necessary high voltages for Program and Erase operations are generated internally, and the device can also be programmed in standard programmers.

Specifications and features

• 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
• FAST ACCESS TIME: 55ns
• FAST PROGRAMMING TIME – 10µs by Byte/16µs by Word typical
• PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Byte-by-Byte or Word-by-Word - Status Register bits and Ready/Busy Output
• MEMORY BLOCKS - Boot Block (Top or Bottom location) - Parameter and Main blocks
• BLOCK, MULTI-BLOCK and CHIP ERASE
• MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
• ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend
• LOW POWER CONSUMPTION - Stand-byand Automatic Stand-by
• 100,000 PROGRAM/ERASE CYCLES per BLOCK
• 20 YEARS DATARETENTION - Defectivity below 1ppm/year
• ELECTRONIC SIGNATURE - ManufacturerCode: 0020h - Device Code, M29F200T: 00D3h - Device Code, M29F200B: 00D4h

Application Scenarios

29F200TA-90FTN can be used in various electronic devices, including but not limited to computers, printers, telecommunications equipment, audio and video equipment, and automotive electronics. The chip can also be used in devices that require programmable memory.

Comparison

• Non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCC supply.
• Fast access time of 55ns.
• Program/erase controller (P/E.C.) that allows programming Byte-by-Byte or Word-by-Word with status register bits and Ready/Busy output.
• Various memory blocks for storage.
• Low power consumption with stand-by and automatic stand-by modes.
• 100,000 program/erase cycles per block with long data retention of up to 20 years.
• ManufacturerCode and device codes for electronic signature.

• The chip may not be compatible with devices that require different supply voltages for program, erase, and read operations.
• The device can only be programmed in standard programmers.