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Description
The LX5511LQ-TR by Microsemi is a power amplifier specially designed for WLAN applications in the 2.3GHz – 2.5GHz frequency range. It is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching. With a single low voltage supply of 3.3V, it provides 26dB power gain at a low quiescent current of 90mA. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD).
Specifications and features
- Advanced InGaP HBT
- 2.3-2.5GHz Operation
- Single-Polarity 3.3V Supply
- Quiescent Current 90mA
- Power Gain 26 dB
- Total Current 150mA for Pout=18 dBm OFDM
- EVM<3 %, 2.4% Typical 54Mbps/64QAM
- Small Footprint: 3x3mm2
- Height 0.9mm
Application Scenarios
The LX5511LQ-TR is suitable for IEEE 802.11b/g applications.
Comparison
Advantages- Optimized for WLAN applications
- Advanced InGaP HBT technology
- Low quiescent current
- Small footprint
Disadvantages- Operates only in the 2.3GHz – 2.5GHz frequency range
- Single-polarity supply voltage limits versatility
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Shipping fee:
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How to Buy:
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Additional Information
- Datasheet: Download LX5511LQ-TR
- Chipdatas Part: CD86-LX5511LQ-TR
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 04:47 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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