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Description
The RD48F3300LOZDQO is an Intel StrataFlash® Embedded Memory device belonging to the IC Chips category. It is a high-performance, symmetrically-blocked architecture electronic component that offers multi-level cell technology with various voltage and power specifications. It has a 16-bit wide data bus and is available in 64/128/256-Mbit densities in 56-Lead TSOP package, 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package, and 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP.
Specifications and features
The RD48F3300LOZDQO has the following specifications and features:
- High performance with initial access of 85/88 ns
- 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
- 25 ns asynchronous-page read mode
- 4-, 8-, 16-, and continuous-word burst mode
- Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
- 1.8 V buffered programming at 7 µs/byte (Typ)
- Multi-Level Cell Technology: Highest Density at Lowest Cost
- Asymmetrically-blocked architecture
- Four 32-KByte parameter blocks: top or bottom configuration
- 128-KByte main blocks
- VCC(core) voltage: 1.7 V – 2.0 V
- VCCQ (I/O) voltage: 1.7 V – 3.6 V
- Standby current: 55 µA (Typ) for 256-Mbit
- 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
- Operating temperature: –40 °C to +85 °C
- Minimum 100,000 erase cycles per block
- ETOX™ VIII process technology (130 nm)
- One-Time Programmable Registers:
- 64 unique factory device identifier bits
- 64 user-programmable OTP bits
- Additional 2048 user-programmable OTP bits
- Selectable OTP Space in Main Array:
- 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
- Absolute write protection: VPP= VSS
- Power-transition erase/program lockout
- Individual zero-latency block locking
- Individual block lock-down
- 20 µs (Typ) program suspend
- 20 µs (Typ) erase suspend
- Intel® Flash Data Integrator optimized
- Basic Command Set and Extended Command Set compatible
- Common Flash Interface capable
Application Scenarios
The RD48F3300LOZDQO is commonly used in various electronic devices that require high-performance and high-density embedded memory. Applications include, but are not limited to:
- Mobile devices
- GPS devices
- Automotive systems
- Industrial systems
- Medical devices
Comparison
Advantages- High performance and density
- Supports multiple burst modes
- Operates at a wide range of temperatures
- Offers a wide range of voltage and power specifications
- Includes quality and reliability features such as minimum 100,000 erase cycles per block and individual block lock-down
- Provides security features such as One-Time Programmable Registers and absolute write protection
Disadvantages- Not suitable for use in low-power devices due to higher standby current
- Higher cost compared to other embedded memory devices
- Limited density options beyond 1-Gbit
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
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- - EMS: 10-15 business days
Shipping fee:
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Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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How to Buy:
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Additional Information
- Datasheet: Download RD48F3300LOZDQO
- Chipdatas Part: CD87-RD48F3300LOZDQO
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/07/01 13:04 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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