Description

The IRFF9131 is an electronic component model in the IC Chips category. It is an advanced power MOSFET designed for various applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors. It is designed and tested to withstand a specified level of energy in the breakdown avalanche mode of operation. The IRFF9131 is a p-channel enhancement-mode silicon-gate power field-effect transistor with high-speed switching and low gate-drive power requirements.

Specifications and features

-5.5A and -6.5A, -60V and -100V rDS(on) = 0.30Ω and 0.40Ω

■ Single pulse avalanche energy rated

■ SOA is power-dissipation limited

■ Nanosecond switching speeds

■ Linear transfer characteristics

■ High input impedance

Application Scenarios

The IRFF9131 is ideal for applications that require high-speed switching, low gate-drive power, and high-power bipolar switching transistors. It can be used in switching regulators, switching converters, motor drivers, relay drivers, and integrated circuits.

Comparison

Advantages:

- High-speed switching

- Low gate-drive power requirements

- Suitable for high-power bipolar switching transistors

Disadvantages:

- Limited to specific applications

- May require additional components for certain circuits