S29GL128N11FFIV20 - Brand New SPANSION IC Chips
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Description
S29GL128N11FFIV20 is a 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology. It is a 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. It comes in three different variants: S29GL512N (512 Mbit), S29GL256N (256 Mbit), and S29GL128N (128 Mbit). The device has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. It can be programmed either in the host system or in standard EPROM programmers.
Specifications and features
- Single power supply operation: 3 volt read, erase, and program operations
- Enhanced VersatileI/O™ control: All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
- Manufactured on 110 nm MirrorBit process technology
- Secured Silicon Sector region: 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence. It may be programmed and locked at the factory or by the customer.
- Flexible sector architecture: S29GL512N (512 Mbit) has five hundred twelve 64 Kword (128 Kbyte) sectors, S29GL256N (256 Mbit) has two hundred fifty-six 64 Kword (128 Kbyte) sectors, and S29GL128N (128 Mbit) has one hundred twenty-eight 64 Kword (128 Kbyte) sectors
- Compatibility with JEDEC standards: Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection
- 100,000 erase cycles per sector typical
- 20-year data retention typical
- High performance: 90 ns access time (S29GL128N, S29GL256N), 100 ns (S29GL512N), 8-word/16-byte page read buffer, 25 ns page read times, 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
- Low power consumption: 25 mA typical active read current, 50 mA typical erase/program current, 1 µA typical standby mode current
- Package options: 56-pin TSOP, 64-ball Fortified BGA
- Software features: Program Suspend and Resume, Erase Suspend and Resume, Data# polling and toggle bits provide status, Unlock Bypass Program command reduces overall multiple-word programming time, CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
- Hardware features: Advanced Sector Protection, WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production, protects first or last sector regardless of sector protection settings, hardware reset input (RESET#) resets device, Ready/Busy# output (RY/BY#) detects program or erase cycle completion
Application Scenarios
The S29GL128N11FFIV20 flash memory can be used in various applications such as consumer electronics, automotive systems, embedded systems, and industrial equipment.
Comparison
Advantages- Single power supply operation
- Enhanced VersatileI/O™ control
- Secured Silicon Sector region
- Flexible sector architecture
- Compatibility with JEDEC standards
- High performance
- Low power consumption
- Software features
- Hardware features
Disadvantages- Limited data retention period (20 years)
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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Popular parts of the same kind
- Datasheet: Download S29GL128N11FFIV20
- Chipdatas Part: CD94-S29GL128N11FFIV20
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 08:28 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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