NAND98R3M0CZBB5E - Brand New STMicroelectronics IC Chips
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Description
This article describes the features and capabilities of the NAND98R3M0CZBB5E electronic component model. This model belongs to the NAND Flash 528 Byte/264 Word Page family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. This model contains a memory array of up to 1 Gbit capacity and operates with either a 1.8V or 3V voltage supply. The size of a page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has an x8 or x16 bus width.
Specifications and features
- High density NAND flash memories
- Up to 1 Gbit memory array
- Up to 32 Mbit spare area
- Cost-effective solutions for mass storage applications
- NAND interface
- x8 or x16 bus width
- Multiplexed Address/Data
- Pinout compatibility for all densities
- Supply voltage
- 1.8V device: VDD = 1.7 to 1.95V
- 3.0V device: VDD = 2.7 to 3.6V
- Page size
- x8 device: (512 + 16 spare) Bytes
- x16 device: (256 + 8 spare) Words
- Block size
- x8 device: (16K + 512 spare) Bytes
- x16 device: (8K + 256 spare) Words
- Page read/program
- Random access: 12µs (max)
- Sequential access: 50ns (min)
- Page program time: 200µs (typ)
- Copy back program mode
- Fast page copy without external buffering
- Fast block erase
- Block erase time: 2ms (Typ)
- Status register
- Electronic signature
- Chip enable 'don't care' option
- Simple interface with microcontroller
- Serial number option
- Hardware data protection
- Program/Erase locked during Power transitions
- Data integrity
- 100,000 Program/Erase cycles
- 10 years Data Retention
- RoHS Compliance
- Lead-Free components are compliant with the RoHS directive
- Development tools
- Error Correction Code software and hardware models
- Bad Blocks Management and Wear Leveling algorithms
- File System OS Native reference software
- Hardware simulation models
Application Scenarios
This electronic component model is suitable for use in applications that require high-density NAND flash memories, such as mass storage applications. It also provides a simple interface with microcontrollers, making it a suitable choice for embedded systems that require NAND flash memory.
Comparison
Advantages- High-density memory
- Low power consumption
- Cost-effective solutions for mass storage applications
Disadvantages- Not suitable for high-speed read/write operations
- May not be suitable for applications that require large amounts of RAM
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
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Popular parts of the same kind
- Datasheet: Download NAND98R3M0CZBB5E
- Chipdatas Part: CD92-NAND98R3M0CZBB5E
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/14 05:32 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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Western Union charge US$0.00 banking fee.
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We recommend to use bank transfer for large orders to save on handling fees.
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