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Description
The HGTH20N50E1D is an n-channel enhancement-mode insulated gate bipolar transistor (IGBT) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. It features a discrete antiparallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. This transistor can be operated directly from low power integrated circuits.
Specifications and features
• 20A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
Application Scenarios
• Power Supplies
• Motor Drives
• Protective Circuits
Comparison
AdvantagesNoneDisadvantagesNone -
Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
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Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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How to Buy:
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- - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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Payment:
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Additional Information
- Datasheet: Download HGTH20N50E1D
- Chipdatas Part: CD90-HGTH20N50E1D
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 09:20 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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Payment Method
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The fee is charged according to the rule of PayPal.
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Western Union charge US$0.00 banking fee.
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We recommend to use bank transfer for large orders to save on handling fees.
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