Description

The electronic component model SB3532UA1 is part of the ISB35000 array series. It utilizes a high-performance, low voltage, triple-level metal, HCMOS 0.5-micron process. With sub-nanosecond internal speeds, this component offers low power dissipation and high noise immunity. The array operates on a voltage range of 2.7 to 3.6 volts. The I/O count for this array family ranges up to 600 signals and 1000 pins, depending on the package technology used. The array supports a sea of I/O approach, allowing for pad spacings from 80 microns upwards. It can be configured for circuits ranging from low voltage CMOS and TTL to low swing differential circuits. Various interface standards, including GTL, SCSI-2, 3.3 Volt PCI, CTI, and a limited set of 5.0 Volt interfaces, are supported. The component also offers specialized impedance-matched transmission line driver LVTTL type circuits with 25, 35, 45, and 55 Ohm output impedance.

Specifications and Features

- 0.5-micron triple layer metal HCMOS process with retrograde well technology, low resistance salicided active areas, polysilicide gates, and thin metal oxide.

- 3.3 V optimized transistor with 5 V I/O interface capability.

- 2-input NAND delay of 0.210 ns (typ) with fanout = 2.

- Broad I/O functionality including LVCMOS, LVTTL, GTL, PECL, and LVDS.

- High drive I/O with the capability of sinking up to 48 mA, slew rate control, current spike suppression, and impedance matching.

- Metallized generators to support SPRAM and DPRAM, plus an extensive embedded function library.

- Combines Standard Cell Features with Sea of Gates for faster time to market.

- Fully independent power and ground configurations for inputs, core, and outputs.

- Programmable I/O ring capability up to 1000 pads.

- Output buffers capable of driving ISA, EISA, PCI, MCA, and SCSI interface levels.

- Active pull-up and pull-down devices.

- Buskeeper I/O functions.

- Oscillators for a wide frequency spectrum.

- Broad range of 400 SSI cells.

- 300 element macrofunction library.

- Design for Test includes LSSD macro library option and IEEE 1149.1 JTAG Boundary Scan architecture built-in.

- Cadence and Mentor-based design system with interfaces from multiple workstations.

- Broad ceramic and plastic package range.

- Latchup trigger current +/- 500 mA. ESD protection +/- 4000 volts.

Application Scenarios

The SB3532UA1 electronic component model is suitable for various applications in the field of IC chips. With its high-performance characteristics, low power dissipation, and extensive I/O functionality, it can be used in a wide range of circuit configurations. The component supports multiple interface standards, making it versatile for different system requirements. Additionally, its programmable I/O ring capability and broad package range provide flexibility for various design needs.

Comparison

- High performance with sub-nanosecond internal speeds.

- Low power dissipation and high noise immunity.

- Wide voltage range of 2.7 to 3.6 volts.

- Support for a variety of interface standards.

- Specialized impedance-matched transmission line driver circuits.

- Metallized generators for supporting SPRAM and DPRAM.

- Combines Standard Cell Features with Sea of Gates for faster time to market.

- Fully independent power and ground configurations.

- Programmable I/O ring capability up to 1000 pads.

- Output buffers capable of driving various interface levels.

- Design for Test with LSSD macro library option and IEEE 1149.1 JTAG Boundary Scan architecture.

- Limited support for 5.0 Volt interfaces.

- Sacrifices direct current capabilities for impedance matching in specialized circuits.