Description

The K6R4016C1C-TC15 is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. It uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. It allows lower and upper byte access by data byte control(UB, LB). The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4016C1C-TC15 is packaged in a 400mil 44-pin plastic SOJ or TSOP(II) forward or 48 T BGA.

Specifications and features

• Fast Access Time 10ns(Max.)
• Low Power Dissipation
Standby (TTL) : 20mA(Max.)
(CMOS) : 5mA(Max.)
Operating K6R4016C1D-10 : 65mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16
• Standard Pin Configuration
K6R4016C1D-J : 44-SOJ-400
K6R4016C1D-K : 44-SOJ-400(Lead-Free)
K6R4016C1D-T : 44-TSOP2-400BF
K6R4016C1D-U : 44-TSOP2-400BF (Lead-Free)
K6R4016C1D-E : 48-TBGA with 0.75 Ball pitch
(7mm X 9mm)

Application Scenarios

The K6R4016C1C-TC15 is particularly well suited for use in high-density high-speed system applications. It is designed for high-speed circuit technology and can be used in various electronic systems where high-speed memory is required.

Comparison

- High-speed access time of 10ns
- Low power dissipation with standby (TTL) at 20mA (Max.) and (CMOS) at 5mA (Max.)
- Single 5.0V±10% power supply
- Fully static operation, no clock or refresh required
- Three state outputs
- Various packaging options available

- Requires data byte control for lower and upper byte access
- Only compatible with TTL inputs and outputs