TY5535 - Brand New Texas Instruments IC Chips
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Description
The TY5535 is an advanced TMOS E-FET power field effect transistor designed for high voltage, high-speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. It is a N-Channel enhancement-mode silicon gate transistor with a drain-to-source diode that has a fast recovery time. The transistor is designed to withstand high energy in the avalanche and commutation modes, providing additional safety margin against unexpected voltage transients. It is specifically designed for efficient energy usage and offers excellent performance in various applications.
Specifications and Features
- Product Category: IC Chips
- Avalanche energy specified for reliable performance
- Diode is characterized for use in bridge circuits
- IDSS and VDS(on) specified at elevated temperature
Application Scenarios
The TY5535 is ideal for use in power supplies, converters, PWM motor controls, and any other applications that require high voltage and high-speed switching. Its efficient design and fast recovery time make it a reliable choice for inductive loads and provide additional safety margin against unexpected voltage transients.
Comparison
Advantages- High energy capability in avalanche and commutation modes
- Fast recovery time for the drain-to-source diode
- Designed for high voltage and high-speed switching applications
- Provides additional safety margin against voltage transients
DisadvantagesNo specific disadvantages have been identified for the TY5535 model.
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download TY5535
- Chipdatas Part: CD91-TY5535
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 14:08 +0800
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