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PF38F2030W0YTQE - Brand New Intel IC Chips - Datasheet - Chipdatas

PF38F2030W0YTQE - Brand New Intel IC Chips

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In Stock: 168, Ready for Immediate Shipping
Brand:Intel
Category:IC Chips
Chipdatas Part No.:CD94-PF38F2030W0YTQE
Manufacturer Part No.:PF38F2030W0YTQE
Datecode:09+
Package:BGA
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  • Description

    This document contains the specifications for the Intel® Advanced+ Boot Block Flash Memory (C3) Stacked Chip Scale Package (SCSP) device. The C3 SCSP device combines flash memory and SRAM into a single package, providing secure low-voltage memory solutions for portable applications. It is available in different combinations of flash memory and SRAM, including 32-Mbit flash + 8-Mbit SRAM, 32-Mbit flash + 4-Mbit SRAM, 16-Mbit flash + 4-Mbit SRAM, and 16-Mbit flash memory + 2-Mbit SRAM. The flash memory features enhanced security, instant locking/unlocking of any flash block with zero-latency, a 128-bit protection register for unique device identification, and improved 12 V production programming for increased factory throughput.

    Specifications and features

    - Flash Memory Plus SRAM: reduces memory board space required, simplifying PCB design complexity.

    - SCSP Technology: offers the smallest memory subsystem footprint. The area is 8 x 10 mm for 16 Mbit (0.13 µm) Flash + 2 Mbit or 4 Mbit SRAM and 8 x 12 mm for 32 Mbit (0.13 µm) Flash + 4 Mbit or 8 Mbit SRAM. The height is 1.20 mm for 16 Mbit (0.13 µm) Flash + 2 Mbit or 4 Mbit SRAM, and 32 Mbit (0.13 µm) Flash + 8 Mbit SRAM. This family also includes 0.25 µm, 0.18 µm, and 0.13 µm technologies.

    - Advanced SRAM Technology: offers a 70 ns access time, low power operation, and low voltage data retention mode.

    - Intel® Flash Data Integrator (FDI) Software: provides real-time data storage and code execution in the same memory device, as well as full flash file manager capability.

    - Advanced+ Boot Block Flash Memory: features a 70 ns access time, instant individual block locking, a 128-bit protection register, 12 V production programming, fast program and erase suspend, and extended temperature range (-25 °C to +85 °C).

    - Blocking Architecture: includes block sizes for code + data storage, 4-Kword parameter blocks, 64-Kbyte main blocks, and 100,000 erase cycles per block.

    - Low Power Operation: offers asynchronous read current of 9 mA (Flash), standby current of 7 µA (Flash), and automatic power saving mode.

    - Flash Technologies: available in 0.25 µm ETOX™ VI, 0.18 µm ETOX™ VII, and 0.13 µm ETOX™ VIII Flash Technologies.

    Application Scenarios

    This Intel® Advanced+ Boot Block Flash Memory device is specifically designed to be used in portable applications that require secure low-voltage memory solutions. It can be used in various electronic devices, such as smartphones, tablets, wearable devices, and more.

    Comparison

    Advantages

    - Combines flash memory and SRAM into a single package, reducing memory board space required.

    - Enhanced security features, including instant locking/unlocking of any flash block with zero-latency and a 128-bit protection register.

    - Improved 12 V production programming for increased factory throughput.

    - Offers a wide range of flash memory and SRAM combinations to meet different application requirements.

    Disadvantages

    - Flash memory technologies available in 0.25 µm, 0.18 µm, and 0.13 µm may have different performance and cost implications.

  • Similar parts: 430483 , Click to view
    Attributes Value
    Category IC Chips
    Manufacturer INTEL
    Product Category IC Chips
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Additional Information
  • Datasheet: Download PF38F2030W0YTQE
  • Chipdatas Part: CD94-PF38F2030W0YTQE
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
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  • Last Updated: 2024/06/13 20:10 +0800
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