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Product Description
The MAGX-002731-100L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.
Features
• GaN depletion mode HEMT microwave transistor
• Common source configuration
• Broadband Class AB operation
• Thermally enhanced Cu/Mo/Cu package
• RoHS Compliant
• +50V Typical Operation
• MTTF of 114 years (Channel Temperature < 200°C)Application
• Civilian and Military Pulsed Radar
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 09:15 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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