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Description
The UPA2709GR-E1-A is an N-channel MOS Field Effect Transistor that is designed for DC/DC converter and power management applications. It is a low on-state resistance with a maximum of 23.0 mΩ (VGS = 10 V, ID = 21 A) and 28.0 mΩ (VGS = 8 V, ID = 21 A). It also has a low Ciss of 2100 pF and a built-in gate protection diode. The UPA2709GR-E1-A comes in a thin type surface mount package with a heat spreader (8-pin HVSON) and is RoHS Compliant.
Specifications and features
- Low on-state resistance: RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A), RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A)
- Low Ciss 2100 pF TYP.
- Built-in gate protection diode
- Thin type surface mount package with heat spreader (8-pin HVSON)
- RoHS CompliantApplication Scenarios
The UPA2709GR-E1-A can be used in various applications including DC/DC converters and power management systems. It provides efficient power management and helps in the conversion of direct current to direct current.
Comparison
Advantages- Low on-state resistance
- Built-in gate protection diode
- RoHS CompliantDisadvantages- None identified
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download UPA2709GR-E1-A
- Chipdatas Part: CD94-UPA2709GR-E1-A
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 09:01 +0800
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- Full Refund if you don't receive your order
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