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Summary Description
H27(U_S)4G8_6F2D series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
The device contains 4096 blocks, composed by 64 pages. Memory array is split into 2 planes, each of them consisting of 2048 blocks. Like all other 2KB - page NAND Flash devices, a program operation allows to write the 2112-byte page in typical 200us(3.3V) and an erase operation can be performed in typical 3.5ms on a 128K-byte block. In addition to this, thanks to multi-plane architecture, it is possible to program 2 pages at a time (one per each plane) or to erase 2 blocks at a time (again, one per each plane). As a consequence, multi-plane architecture allows program
time to be reduced by 40% and erase time to be reduction by 50%. In case of multi-plane operation, there is small degradation at 1.8V application in terms of program/erase time. -
Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
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- - EMS: 10-15 business days
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DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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Popular parts of the same kind
- Datasheet: Download H27UEG8Y2B-TPCB
- Chipdatas Part: CD92-H27UEG8Y2B-TPCB
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 08:00 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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Western Union charge US$0.00 banking fee.
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