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Description
This specification covers a range of 1K bit serial EEPROM products, the ST93C46A,46C,46T specified at 5V±10% and the ST93C47C,47T specified at 3V to 5.5V. In the text, products are referred to as ST93C46. The ST93C46 is a 1K bit Electrically Erasable ProgrammableMemory (EEPROM) fabricatedwith SGS-THOMSON’s High EnduranceSingle Polysili con CMOS technology. The memory is accessed through a serial input (D) and output (Q).
Specifications and features
1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST93C46 version – 3V to 5.5V for ST93C47 version SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ENHANCED ESD/LATCH UP PERFORMANCE for ”C” VERSION ST93C46A, ST93C46C, ST93C46T, ST93C47C, ST93C47T are replaced by the M93C46
Application Scenarios
There are various applications for the AB1012R1A electronic component model. Some examples include: - EEPROM programming and data storage - Low voltage applications requiring 3V to 5.5V supply - Serial communication devices - Memory expansion in electronic systems
Comparison
Advantages- High endurance and long data retention - Dual organization for flexible memory programming - Self-timed programming cycle with auto-erase feature - Enhanced ESD/latch up performance for improved reliability
Disadvantages- Limited memory capacity of 1K bit
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Similar parts: 430483 , Click to view
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Datasheet
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- Datasheet: Download AB1012R1A
- Chipdatas Part: CD94-AB1012R1A
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- Last Updated: 2024/07/01 02:20 +0800
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