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Description
The NEZ1011-3E is a power GaAs MESFET designed for X, Ku-band applications. It provides high gain, high efficiency, and high output. The device features an internal input and output matching, allowing for guaranteed performance with a 50 Ω external circuit. To enhance thermal dissipation, it is equipped with a PHS (Plated Heat Sink) structure. Additionally, the NEZ1011-3E incorporates a WSi (tungsten silicide) gate structure, ensuring high reliability.
Specifications and Features
- High Output Power: Po (1 dB) = +34.0 dBm typical
- High Linear Gain: 8.5 dB typical (NEZ1011-3E), 7.5 dB typical (NEZ1414-3E)
- High Efficiency: 30% typical
- Internal Input and Output Matching for Optimum PerformanceApplication Scenarios
The NEZ1011-3E is suitable for use in X, Ku-band applications where high gain, high efficiency, and high output power are required. It is commonly used in electronic devices and systems that operate within these frequency bands.
Comparison
Advantages- Provides high gain and high efficiency
- Internal input and output matching for guaranteed performance
- Equipped with a PHS (Plated Heat Sink) structure for enhanced thermal dissipation
- Incorporates a WSi (tungsten silicide) gate structure for high reliabilityDisadvantages- None identified
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
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Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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Popular parts of the same kind
- Datasheet: Download NEZ1011-3E
- Chipdatas Part: CD94-NEZ1011-3E
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 12:33 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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