RA20H8087M-101 - Brand New IC Chips
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DESCRIPTION
The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.FEATURES
• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>20W, ηT>25% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 806-870MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power -
Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download RA20H8087M-101
- Chipdatas Part: CD94-RA20H8087M-101
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/23 11:35 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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