Description

The MAT12AHZ is a dual, NPN-matched transistor pair specifically designed for ultralow noise audio systems. It has an extremely low input base spreading resistance (rbb) of typically 28 Ω and a high current gain (hFE) of typically exceeding 600 at IC = 1 mA, resulting in outstanding signal-to-noise ratios. The MAT12AHZ outperforms systems that use commercially available monolithic amplifiers. It offers excellent matching of the current gain (ΔhFE) to about 0.5% and low VOS (offset voltage) of less than 10 μV typical, making it ideal for symmetrically balanced designs and reducing high-order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base emitter junction, preventing degradation of beta and matching characteristics due to reverse biasing. The MAT12AHZ is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Its low VOS eliminates the need for offset trimming in most circuit applications.

Specifications and Features

• Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz
• Excellent current gain match: 0.5% typical
• Low offset voltage (VOS): 200 μV maximum
• Outstanding offset voltage drift: 0.03 μV/°C typical
• High gain bandwidth product: 200 MHz

Application Scenarios

The MAT12AHZ is specifically designed for ultralow noise audio systems. It can be used in various audio applications that require high signal-to-noise ratios and low distortion, such as preamplifiers, equalizers, mixers, and audio amplifiers. Its excellent matching and stability characteristics make it suitable for symmetrically balanced designs and current biasing circuits.

Comparison

• Extremely low input base spreading resistance
• High current gain
• Excellent matching of current gain
• Low offset voltage
• Stability of matching parameters

• None identified