CKV2310 - Brand New Texas Instruments IC Chips
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Description
The CKV2310 is a 1048576-bit CMOS static RAM that features a high density and low power consumption. It is organized as 131072 word by 8-bit and utilizes high-performance quadruple-polysilicon and double metal CMOS technology. The CKV2310 is designed with thin film transistor (TFT) load cells and CMOS periphery, making it ideal for low standby current and low operation current applications, such as battery back-up.
The CKV2310 is available in a 32-pin thin small outline package, offering high reliability and high density surface mount device (SMD). It comes in two different types: CKV2310(normal lead bend type package) and CKV2310(reverse lead bend type package), which makes it easy to design a printed circuit board.
Specifications and features
- Low standby current: 0.1µA (typ.)
- Directly TTL compatible: All inputs and outputs
- Easy memory expansion and power down by S1, S2
- Data hold on +2V power supply
- Three-state outputs: OR - tie capability
- OE prevents data contention in the I/O bus
- Common data I/O
- Packaging options:
- CKV2310CFP: 32-pin 525mil SOP
- CKV2310CVP, RV: 32-pin 8 X 20 mm2 TSOP
- CKV2310KV, KR: 32-pin 8 X 13.4 mm2 TSOP
Application Scenarios
The CKV2310 is suitable for small capacity memory units.
Comparison
Advantages- High density and low power consumption
- Low standby current and low operation current
- Easy to design printed circuit boards
Disadvantages- None
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download CKV2310
- Chipdatas Part: CD94-CKV2310
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/13 01:16 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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