Description

The DMMT3906W-7 is a member of the transistors array family, specifically, BJT transistors. These electronic components are designed to be used in a variety of electronic applications that require high precision and small surface mount packages. The DMMT3906W-7 is intricately constructed with an epitaxial planar die that ensures high-quality performance. It is composed of an intrinsically matched PNP pair that guarantees optimal operation. Additionally, it comes with a 2% matched tolerance for hFE, VCE(SAT), and VBE(SAT), while a 1% matched tolerance is available as well (Note 2).

Specifications and Features

• Product Category: Transistors (BJT) - Arrays
• Manufacturer: Diodes Incorporated
• Part Status: Active
• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 350mV @ 500μA, 10mA
• Power - Max: 350mW

Application Scenarios

The DMMT3906W-7 is widely used in electronic applications that require precision in a small surface mount package. Its high-quality performance and small size make it an ideal choice for applications such as battery management systems, voltage regulators, and power management control circuits.

Comparison

• High-quality performance due to its epitaxial planar die construction
• Intrinsically matched PNP pair for optimal operation
• 2% matched tolerance for hFE, VCE(SAT), and VBE(SAT), with a 1% matched tolerance available
• Small surface mount package ideal for applications that require precision in a small space

• The maximum current collector is 100mA, which may not be sufficient for some applications.
• The maximum power rating is 350mW, which may not be enough for high-power applications.