Description

The K4S643233F-DE75 is a high data rate Dynamic RAM with a capacity of 67,108,864 bits. It is organized as 4 x 524,288 words by 32 bits, using SAMSUNG's high-performance CMOS technology. The synchronous design allows precise cycle control with the use of a system clock, enabling I/O transactions on every clock cycle. It offers a range of operating frequencies, programmable burst lengths, and programmable latencies, making it suitable for various high bandwidth and high-performance memory system applications.

Specifications and features

- Power supply: 3.0V & 3.3V
- LVCMOS compatible with multiplexed address
- Four banks operation
- MRS cycle with address key programs
- CAS latency (1, 2 & 3)
- Burst length (1, 2, 4, 8 & Full page)
- Burst type (Sequential & Interleave)
- All inputs are sampled at the positive going edge of the system clock
- Burst read single-bit write operation
- DQM for masking
- Auto & self-refresh
- 64ms refresh period (4K cycle)
- Extended temperature operation (-25°C to 85°C)
- Industrial temperature operation (-40°C to 85°C)
- Available in 90-balls FBGA(-SXXX -Pb, -DXXX -Pb Free)

Application Scenarios

The K4S643233F-DE75 can be used in various high bandwidth and high-performance memory system applications. Its precise cycle control and programmable features make it suitable for applications that require precise data storage and retrieval, such as computer systems, networking devices, and high-speed data processing systems.

Comparison

- High data rate and capacity
- Synchronous design for precise cycle control
- Programmable features for flexibility in different applications
- Supports a range of operating frequencies
- Extended and industrial temperature operation
- None mentioned in the provided information.