K4B2G1646Q-BCK0 - Brand New SAMSUNG IC Chips
In Stock:11410 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
11410,
Ready for Immediate Shipping
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Description
The K4B2G1646Q-BCK0 is an electronic component model found in the IC chips product category. It is a 2Gb DDR3 SDRAM Q-die that is organized as a 16Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. The chip is designed to comply with key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.
Specifications and features
- JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
- VDDQ = 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
- 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin, and 900MHz fCK for 1866Mb/sec/pin
- 8 Banks
- Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13
- Programmable Additive Latency: 0, CL-2 or CL-1 clock
- Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9(DDR3-1866)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
- Bi-directional Differential Data-Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
- Support Industrial Temp ( -40 °C ~ 95°C )
- tREFI 7.8us at -40 °C ≤ TCASE ≤ 85°C
- tREFI 3.9us at 85 °C < TCASE ≤ 95°C
- Asynchronous Reset
- Package : 96 balls FBGA - x16
- All of Lead-Free products are compliant for RoHS
- All of products are Halogen-free
Application Scenarios
The K4B2G1646Q-BCK0 can be used in general computer applications that require high speed double-data-rate transfer rates. Its specific features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset also make it suitable for use in applications that demand these particular DDR3 SDRAM features.
Comparison
Advantages- Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13
- Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9(DDR3-1866)
- Average Refresh Period of 7.8us at lower than TCASE 85°C, and 3.9us at 85°C < TCASE < 95 °C
- Supports Industrial Temp (-40 °C ~ 95°C)
- All Lead-Free products are compliant for RoHS
- All products are Halogen-free
Disadvantages- May not be suitable for applications that do not require high speed double-data-rate transfer rates or the specific DDR3 SDRAM features that the chip offers
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
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How to Buy:
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Additional Information
- Datasheet: Download K4B2G1646Q-BCK0
- Chipdatas Part: CD90-K4B2G1646Q-BCK0
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/05/12 13:59 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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