G5N120RUFD - Brand New Fairchild Semiconductor IC Chips
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**The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120).**
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49306.Features
• 21A, 1200V, TC = 25°C
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards” -
Similar parts: 430483 , Click to view
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Datasheet
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- Datasheet: Download G5N120RUFD
- Chipdatas Part: CD93-G5N120RUFD
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 16:24 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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