Overview

The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current.

Features

• Supply voltage range: 2.7 to 5.5 V
— In 5-V operation mode: 5.0 V ±10%
— In 3-V operation mode: 3.0 V ±10%
• Address access time (tAA)
— In 5-V operation mode:
LC3564B, BS, BM, and BT-70: 70 ns (max)
LC3564B, BS, BM, and BT-10: 100 ns (max)
— In 3-V operation mode:
LC3564B, BS, BM, and BT-70: 200 ns (max)
LC3564B, BS, BM, and BT-10: 500 ns (max)
• Ultralow standby current
— In 5-V operation mode: 1.0 µA (Ta ≤70°C), 3.0 µA (Ta ≤85°C)
— In 3-V operation mode: 0.8 µA (Ta ≤70°C), 2.5 µA (Ta ≤85°C)
• Operating temperature range
— In 5-V operation mode: –40 to 85°C
— In 3-V operation mode: –40 to 85°C
• Data retention supply voltage: 2.0 to 5.5 V
• All input and output levels:
— In 5-V operation mode: TTL compatible levels
— In 3-V operation mode: VCC –0.2 V/0.2 V
• Three control inputs: OE, CE1, and CE2
• Shared input and output pins, three-state outputs
• No clock required
• Packages
28-pin DIP (600 mil) plastic package: LC3564B
28-pin DIP (300 mil) plastic package: LC3564BS
28-pin SOP (450 mil) plastic package: LC3564BM
28-pin TSOP (8 ×13.4 mm) plastic package: LC3564BT