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MMBFJ175LT1G - Brand New onsemi JFETs - Datasheet - Chipdatas

MMBFJ175LT1G - Brand New onsemi JFETs

In Stock:312989 ,Ready for Immediate Shipping
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In Stock: 312989, Ready for Immediate Shipping
Brand:onsemi
Category:JFETs
Chipdatas Part No.:CD92-MMBFJ175LT1G
Manufacturer Part No.:MMBFJ175LT1G
Datecode:09+
Package:TO-236-3, SC-59, SOT-23-3
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  • Description

    The MMBFJ175LT1G is a P-channel JFET chopper component, belonging to the JFETs product category. It has depletion characteristics, making it suitable for use in circuits that require a voltage-controlled resistor.

    Specifications and features

    • Product Category: JFETs
    • Manufacturer: ON Semiconductor
    • RoHS Compliant: Yes
    • Polarity: P-Channel
    • Gate Voltage (VGS(off)max): -40V
    • Drain Current (ID): -0.035A
    • Total Power Dissipation (PD): 225mW
    • Operating Temperature Range: -55°C to +150°C

    The features of the MMBFJ175LT1G include being Pb-Free and Halogen-Free/BFR Free. It is also RoHS Complaint, meeting the global standard for environmental friendliness.

    Application Scenarios

    The MMBFJ175LT1G P-channel JFET is commonly used in circuits that require a voltage-controlled resistor. Its depletion characteristics make it particularly suitable for sensing applications, as well as in low noise and high impedance amplifiers.

    Comparison

    Advantages
    • Low noise performance
    • High input impedance
    • Simple to use in circuits requiring variable resistance
    Disadvantages
    • Relies on the state of the gate being held constant
    • May experience gate leakage, causing changes to the resistance value
    • Not suitable if the circuit requires an N-channel JFET
  • Similar parts: 268 , Click to view
    Attributes Value
    Category JFETs
    Manufacturer onsemi
    Product Category JFETs
    Series MMBFJ175L
    Packaging Alternate Packaging
    Unit-Weight 0.050717 oz
    Mounting-Style SMD/SMT
    Package-Case TO-236-3, SC-59, SOT-23-3
    Mounting-Type Surface Mount
    Supplier-Device-Package SOT-23-3 (TO-236)
    Configuration Single
    FET-Type P-Channel
    Power-Max 225mW
    Breakdown voltage 30V
    VDSS – Drain-Source Voltage -
    Current-Drain-Idss-Vds-Vgs=0 7mA @ 15V
    Current-Drain-Id-Max -
    Voltage-Cutoff-VGS-off-Id 3V @ 10nA
    Input Capacitance 11pF @ 10V (VGS)
    Resistance-RDS-On 125 Ohm
    Transistor-Polarity P-Channel
    Vgs-Gate-Source-Breakdown-Voltage 30 V
    Drain-to-Source-Voltage-Vdss 7 mA to 60 mA
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  • Shopping guide

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    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download MMBFJ175LT1G
  • Chipdatas Part: CD92-MMBFJ175LT1G
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/12 19:51 +0800
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    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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