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Description
The TEESVPOJ226M8R is an electronic component model categorized as IC Chips. It is a 2 Mbit, 3.0 volt-only Flash memory with a capacity of 262,144 bytes or 131,072 words. This device is designed to be programmed in-system using only a single 3.0 volt VCC supply and does not require VPP for write or erase operations. It is compatible with standard EPROM programmers.
Specifications and features
- Single power supply operation: 2.7 to 3.6 volt read and write operations for battery-powered applications
- Manufactured on 0.32 µm process technology and compatible with 0.5 µm Am29LV200 device
- High performance: access times as fast as 70 ns (full voltage range) and 55 ns (regulated voltage range)
- Ultra low power consumption: 200 nA Automatic Sleep mode current, 200 nA standby mode current, 7 mA read current, and 15 mA program/erase current
- Flexible sector architecture: includes one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and three 64 Kbyte sectors (byte mode) and one 8 Kword, two 4 Kword, one 16 Kword, and three 32 Kword sectors (word mode)
- Sector Protection features: hardware method of locking a sector to prevent program or erase operations, sectors can be locked in-system or via programming equipment, temporary Sector Unprotect feature allows code changes in previously locked sectors
- Unlock Bypass Program Command reduces overall programming time when issuing multiple program command sequences
- Top or bottom boot block configurations available
- Embedded Algorithms: Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors, Program algorithm automatically writes and verifies data at specified addresses
- Minimum 1 million erase cycle guarantee per sector
- 20-year data retention at 125°C for reliable operation
- Package options: 48-pin TSOP, 44-pin SO, 48-ball FBGA
- Compatibility with JEDEC standards: pinout and software compatible with single-power supply Flash, superior inadvertent write protection
- Data# Polling and toggle bits provide a software method of detecting program or erase operation completion
- Ready/Busy# pin (RY/BY#) for hardware detection of program or erase cycle completion
- Erase Suspend/Erase Resume: suspends an erase operation to read data from or program data to a sector that is not being erased, then resumes the erase operation
- Hardware reset pin (RESET#) for resetting the device to reading array data
Application Scenarios
The TEESVPOJ226M8R is suitable for various applications including battery-powered devices, electronic systems requiring low power consumption, data storage and retention in extreme temperature conditions, and systems that require reliable and high-performance Flash memory.
Comparison
Advantages- Single power supply operation
- High performance with fast access times
- Ultra low power consumption
- Flexible sector architecture for versatile data storage
- Compatibility with JEDEC standards
- Data# Polling and toggle bits for program/erase operation completion detection
Disadvantages- Requires specific programming equipment for sector locking
- Limited erase cycles per sector
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
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Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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How to Buy:
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Additional Information
- Datasheet: Download TEESVPOJ226M8R
- Chipdatas Part: CD94-TEESVPOJ226M8R
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/14 08:12 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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Payment Method
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