TZB4Z060EA10R00 - Brand New Murata Electronics IC Chips
In Stock:830 ,Ready for Immediate Shipping
New
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In Stock:
830,
Ready for Immediate Shipping
Brand:Murata Electronics
Category:IC Chips
Chipdatas Part No.:CD94-TZB4Z060EA10R00
Manufacturer Part No.:TZB4Z060EA10R00
Datecode:09+
Package:NA
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Description
The TZB4Z060EA10R00 is a electronic component model in the IC Chips product category. It is a 64 Mbit non-volatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis. The circuitry requires a supply voltage of 1.65V to 2.2V (VDD) and the Input/Output pins require a supply voltage of 1.65V to 3.3V (VDDQ). It also has the option for a 12V VPP power supply to speed up customer programming.
Specifications and features
- Supply voltage: VDD = 1.65V to 2.2V for Program, Erase and Read
- VDDQ = 1.65V to 3.3V for I/O Buffers
- VPP = 12V for fast Program (optional)
- Synchronous Burst Read mode: 54MHz
- Asynchronous/Synchronous Page Read mode
- Random Access: 70, 80, 100 ns
- Programming Time: 8µs by Word typical for Fast Factory Program
- Double/Quadruple Word Program option
- Enhanced Factory Program options
- Memory Blocks: Multiple Bank Memory Array with 4 Mbit Banks
- Parameter Blocks (Top or Bottom location)
- Dual Operations: Program Erase in one Bank while Read in others, No delay between Read and Write operations
- Block Locking: All blocks locked at Power up, Any combination of blocks can be locked, WP for Block Lock-Down
- Security: 128 bit user programmable OTP cells, 64 bit unique device number, One parameter block permanently lockable
- Common Flash Interface (CFI)
- 100,000 PROGRAM/ERASE CYCLES per BLOCK
- Electronic Signature: Manufacturer Code: 20h, Top Device Code, M58WR064ET: 8810h, Bottom Device Code, M58WR064EB: 8811h
Application Scenarios
The TZB4Z060EA10R00 electronic component model is ideal for various applications that require non-volatile Flash memory with programmable and erasable capabilities. It can be used in devices such as computers, smartphones, tablets, and other electronic devices that need reliable data storage.
Comparison
Advantages- Highly reliable non-volatile Flash memory
- Electrically erasable at block level
- Programmable in-system on a Word-by-Word basis
- Wide supply voltage range for circuitry and Input/Output pins
- Optional 12V power supply for fast programming
- Multiple bank memory array for efficient data storage
- Enhanced factory program options for flexible programming
- Security features: user programmable OTP cells and unique device number
- Block locking and WP for block lock-down
- Supports common flash interface (CFI)
- High endurance with 100,000 program/erase cycles per block
- Manufacturer and device identification with electronic signature
DisadvantagesThere are no specific disadvantages known for the TZB4Z060EA10R00 electronic component model.
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
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- - View in your order page
Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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How to Buy:
- - In-stock, Add to cart > Check out > Submit order > Complete payment >Delivery.
- - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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Additional Information
- Datasheet: Download TZB4Z060EA10R00
- Chipdatas Part: CD94-TZB4Z060EA10R00
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/14 06:11 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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Payment Method
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Western Union charge US$0.00 banking fee.
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