NANDDBR4N9AZBC5E - Brand New Numonyx IC Chips
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Description
The NANDDBR4N9AZBC5E is a family of non-volatile Flash memories that use the Single Level Cell (SLC) NAND cell technology. These memories are referred to as the Small Page family and come in a range of capacities from 128Mbits to 1Gbit. They operate with either a 1.8V or 3V voltage supply and have a page size of either 528 Bytes or 264 Words. The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or x16 Input/Output bus, reducing the pin count and allowing for easy migration to other densities without changing the footprint.
Specifications and features
The NANDDBR4N9AZBC5E features include:
- HIGH DENSITY NAND FLASH MEMORIES
- Up to 1 Gbit memory array
- Up to 32 Mbit spare area
- Cost-effective solutions for mass storage applications
- NAND INTERFACE
- x8 or x16 bus width
- Multiplexed Address/Data
- Pinout compatibility for all densities
- SUPPLY VOLTAGE
- 1.8V device: VDD = 1.7 to 1.95V
- 3.0V device: VDD = 2.7 to 3.6V
- PAGE SIZE
- x8 device: (512 + 16 spare) Bytes
- x16 device: (256 + 8 spare) Words
- BLOCK SIZE
- x8 device: (16K + 512 spare) Bytes
- x16 device: (8K + 256 spare) Words
- PAGE READ/PROGRAM
- Random access: 12µs (max)
- Sequential access: 50ns (min)
- Page program time: 200µs (typ)
- COPY BACK PROGRAM MODE
- Fast page copy without external buffering
- FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
- STATUS REGISTER
- ELECTRONIC SIGNATURE
- CHIP ENABLE 'DON'T CARE' OPTION
- Simple interface with microcontroller
- SERIAL NUMBER OPTION
- HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions
- DATA INTEGRITY
- 100,000 Program/Erase cycles
- 10 years Data Retention
- RoHS COMPLIANCE
- Lead-Free Components are Compliant with the RoHS Directive
- DEVELOPMENT TOOLS
- Error Correction Code software and hardware models
- Bad Blocks Management and Wear Leveling algorithms
- File System OS Native reference software
- Hardware simulation models
Application Scenarios
The NANDDBR4N9AZBC5E is suitable for a wide range of applications including mass storage, data retention, and file system management. It provides a cost-effective solution for high-density NAND flash memory needs and can be easily integrated into existing systems with its simple interface and compatibility with microcontrollers.
Comparison
Advantages- High-density memory array
- Fast program and erase times
- Data integrity with 100,000 program/erase cycles and 10 years of data retention
- RoHS compliantDisadvantages- None identified
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Popular parts of the same kind
- Datasheet: Download NANDDBR4N9AZBC5E
- Chipdatas Part: CD90-NANDDBR4N9AZBC5E
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 11:58 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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