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SI4825DDY-T1-GE3 - Brand New ROHM FETs - Single - Datasheet - Chipdatas

SI4825DDY-T1-GE3 - Brand New ROHM FETs - Single

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In Stock: 21360, Ready for Immediate Shipping
Brand:ROHM
Category: FETs - Single
Chipdatas Part No.:CD88-SI4825DDY-T1-GE3
Manufacturer Part No.:SI4825DDY-T1-GE3
Datecode:09+
Package:8-SOIC 0.154", 3.90mm Width
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  • Description

    The SI4825DDY-T1-GE3 is a single N-channel MOSFET designed for use in switching applications. It has a low on-resistance and is capable of handling high current loads. This MOSFET is ideal for use in DC-DC converters, power management systems, and motor control circuits.

    Specifications and features

    • Drain-Source Voltage (Vdss): 30V
    • Continuous Drain Current (Id) @ 25°C: 10A (Tc)
    • Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) @ Vgs: 16nC @ 10V

    Application Scenarios

    The SI4825DDY-T1-GE3 MOSFET can be used in various applications that require a low on-resistance and high current handling capabilities. Some of these applications include:

    • DC-DC converters
    • Power management systems
    • Motor control circuits
    • Lighting systems
    • Audio amplifiers

    Comparison

    Advantages
    • Low on-resistance
    • High current handling capabilities
    • Fast switching speed
    • High thermal efficiency
    Disadvantages
    • May not be suitable for applications requiring low power consumption
  • Similar parts: 155 , Click to view
    Attributes Value
    Category FETs - Single
    Manufacturer ROHM
    Product Category FETs - Single
    Series TrenchFET®
    Packaging Alternate Packaging
    Part-Aliases SI4825DDY-GE3
    Unit-Weight 0.006596 oz
    Mounting-Style SMD/SMT
    Package-Case 8-SOIC (0.154", 3.90mm Width)
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 1 Channel
    Supplier-Device-Package 8-SO
    Configuration Single Quad Drain Triple Source
    FET-Type MOSFET P-Channel, Metal Oxide
    Power-Max 5W
    Transistor-Type 1 P-Channel
    VDSS – Drain-Source Voltage 30V
    Input Capacitance 2550pF @ 15V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 14.9A (Tc)
    Rds-On-Max-Id-Vgs 12.5 mOhm @ 10A, 10V
    Vgs-th-Max-Id 2.5V @ 250μA
    Gate-Charge-Qg-Vgs 86nC @ 10V
    Pd-Power-Dissipation 2.7 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 9 ns 19 ns
    Rise-Time 12 ns 92 ns
    Vgs-Gate-Source-Voltage 25 V
    ID (drain current) 10.9 A
    Vds-Drain-Source-Breakdown-Voltage - 30 V
    Rds-On-Drain-Source-Resistance 12.5 mOhms
    Transistor-Polarity P-Channel
    Typical-Turn-Off-Delay-Time 40 ns 34 ns
    Turn-On Delay Time 13 ns 48 ns
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Additional Information
  • Datasheet: Download SI4825DDY-T1-GE3
  • Chipdatas Part: CD88-SI4825DDY-T1-GE3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 09:06 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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