Description

The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.

Specifications and features

• 0.23 µm Process Technology
• Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program
• Single 3.0 V read, program, and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: TN – Normal Bend Type, TR – Reversed Bend Type) 63-ball FBGA (Package suffix: PBT
• Minimum 100,000 program/erase cycles
• High performance 80 ns maximum access time
• Sector erase architecture Eight 4K word and sixty-three 32K word sectors in word mode Eight 8K byte and sixty-three 64K byte sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Hidden ROM (Hi-ROM) region 64K byte of Hi-ROM, accessible through a new “Hi- ROM Enable” command sequence Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status At VIH, allows removal of boot sector protection At VACC, increases program performance
• Embedded EraseTM*Algorithms Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion
• Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode.
• Low VCC write inhibit ≤ 2.5 V
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector group protection command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection Temporary sector group unprotection via the RESET pin.
• In accordance with CFI (Common Flash Memory Interface)

Application Scenarios

The MBM29DL32XTE/BE Flash memory chips are commonly used in electronic devices such as computers, smartphones, tablets, and other devices that require non-volatile memory storage. They can be used for storing firmware, operating systems, and other important data.

Comparison

- 3.0 V-only Flash memory, no requirement for additional voltage
- Multiple bank sizes available for simultaneous read/write operations
- Minimizes system level power requirements with single 3.0 V read, program, and erase
- Compatible with JEDEC-standard commands and pinouts for easy integration
- High performance with fast access time
- Sector erase architecture allows for flexible and efficient data management
- Hidden ROM region for secure electronic serial number
- Embedded algorithms for automatic programming and erasing
- Ready/Busy output for cycle completion detection
- Low power mode for energy efficiency
- Enhanced protection features for boot sectors and sector groups
- Compliance with CFI for compatibility with various systems

- None identified