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Description
The HGTP11N120CN, also known as HGTG11N120CN and HGT1S11N120CNS, is a Non-Punch Through (NPT) IGBT design. It is a part of the MOS gated high voltage switching IGBT family, which combines the advantages of MOSFETs and bipolar transistors. This device offers the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
It is particularly suitable for high voltage switching applications that operate at moderate frequencies and require low conduction losses. Some of the applications where the HGTP11N120CN IGBT can be used include AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors.
Specifications and features
• 43A, 1200V, TC = 25°C
• 1200V Switching SOA Capability
• Typical Fall Time: 340ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
• Temperature Compensating SABER™ Model
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Application Scenarios
The HGTP11N120CN IGBT is suitable for various high voltage switching applications, including:
- AC and DC motor controls
- Power supplies
- Drivers for solenoids, relays, and contactors
Comparison
AdvantagesNoneDisadvantagesNone -
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Datasheet
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Popular parts of the same kind
- Datasheet: Download HGTP11N120CN
- Chipdatas Part: CD90-HGTP11N120CN
- Warehouse: China, Hong Kong
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- Last Updated: 2024/06/13 10:14 +0800
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