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Description
The BS616LV2018EI-70 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage.
Specifications and features
• Very low operation voltage: 2.4 ~ 3.6V
• Very low power consumption:
Vcc = 3.0V C-grade: 16mA (Max.) operating current
I-grade: 20mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
• High speed access time: -70 70ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pinApplication Scenarios
The BS616LV2018EI-70 can be used in various IC chip applications that require high performance, low power consumption, and easy expandability. Its wide range of operation voltage makes it suitable for different supply conditions. The automatic power down feature when deselected helps in conserving power. The three state outputs and TTL compatibility make it compatible with a wide range of devices.
Comparison
Advantages- Very low operation voltage and power consumption
Disadvantages- None
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download BS616LV2018EI-70
- Chipdatas Part: CD94-BS616LV2018EI-70
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/13 20:03 +0800
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The fee is charged according to the rule of PayPal.
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