Description

The SST29VE010-150-4C-EHE is a 128K x8 CMOS Page-Write EEPROM manufactured with SST's proprietary SuperFlash technology. It features a split-gate cell design and thick-oxide tunneling injector, ensuring better reliability and manufacturability than alternate approaches. The SST29EE/VE010 operates with a single power supply and has internal erase/program functionality. It also conforms to JEDEC standard pinouts for byte-wide memories.

Specifications and Features

• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption
• Fast Page-Write Operation
• Fast Read Access Time
• Latched Address and Data
• Automatic Write Timing
• End of Write Detection
• Hardware and Software Data Protection
• Product Identification via Software Operation
• TTL I/O Compatibility
• JEDEC Standard
• Packages Available
• All non-Pb (lead-free) devices are RoHS compliant

Application Scenarios

The SST29VE010-150-4C-EHE is commonly used in various electronic applications, including but not limited to:

• Computers and servers
• Consumer electronics
• Automotive systems
• Industrial equipment
• Embedded systems

Comparison

Advantages:

• Superior reliability with 100,000 cycle endurance
• Low power consumption for energy efficiency
• Fast page-write operation and read access time
• Hardware and software data protection
• RoHS compliant

Disadvantages:

• Specific application required
• May not be suitable for all memory-related needs
• Limited package options