Description

The SPN4910S8RGB is an N-Channel logic enhancement mode power field effect transistor produced using high cell density, DMOS trench technology. This transistor has a high density process that minimizes on-state resistance, making it suitable for low voltage applications, notebook computer power management, and other battery-powered circuits where high-side switching is required.

Specifications and features

◆ 30V/6.8A,RDS(ON)= 28mΩ@VGS = 10V
◆ 30V/5.6A,RDS(ON)= 36mΩ@VGS = 4.5V
◆ Super high density cell design for extremely low RDS (ON)
◆ Exceptional on-resistance and maximum DC current capability
◆ SOP – 8P package design

Application Scenarios

● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter

Comparison

The SPN4910S8RGB offers the following advantages:

• High cell density design for reduced on-state resistance
• Exceptional on-resistance and maximum DC current capability
• Suitable for low voltage applications and high-side switching
• Compact SOP – 8P package design

However, it is important to note that this model does not have any specific disadvantages.