UPA2726UT1A-E2-AY - Brand New RENESAS IC Chips
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Description
The UPA2726UT1A-E2-AY is an N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. It offers low on-state resistance, low Ciss, and a built-in gate protection diode. The component comes in a thin type surface mount package with a heat spreader and is RoHS Compliant.
Specifications and features
- Low on-state resistance: - RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) - RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A) - Low Ciss: 2100 pF TYP. - Built-in gate protection diode - Thin type surface mount package with heat spreader (8-pin HVSON) - RoHS Compliant
Application Scenarios
The UPA2726UT1A-E2-AY can be used in various DC/DC converter and power management applications. It is suitable for applications that require low on-state resistance and low Ciss. The built-in gate protection diode ensures the safety and reliability of the component.
Comparison
Advantages- Low on-state resistance: The UPA2726UT1A-E2-AY offers a low on-state resistance, which allows for efficient power management and reduces power loss. - Low Ciss: The component has a low Ciss value, minimizing the capacitance and improving overall performance. - Built-in gate protection diode: The built-in gate protection diode enhances the safety and reliability of the component.
DisadvantagesCurrently, there are no known disadvantages of the UPA2726UT1A-E2-AY.
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Popular parts of the same kind
- Datasheet: Download UPA2726UT1A-E2-AY
- Chipdatas Part: CD94-UPA2726UT1A-E2-AY
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/12 22:28 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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