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INTRODUCTION
This datasheet contains 16- and 32-Mbit WordWide FlashFileTM memory (28F160S3 and 28F320S3) specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications for extended temperature product offerings.
■ Two 32-Byte Write Buffers
- 2.7 µs per Byte Effective Programming Time
■ Low Voltage Operation
- 2.7V or 3.3V VCC
- 2.7V, 3.3V or 5V VPP
■ 100 ns Read Access Time (16 Mbit) 110 ns Read Access Time (32 Mbit)
■ High-Density Symmetrically-Blocked Architecture
- 32 64-Kbyte Erase Blocks (16 Mbit)
- 64 64-Kbyte Erase Blocks (32 Mbit)
■ System Performance Enhancements
- STS Status Output
■ Industry-Standard Packaging
- µBGA package, SSOP, and TSOP (16 Mbit)
- µBGA package and SSOP (32 Mbit)
■ Cross-Compatible Command Support
- Intel Standard Command Set
- Common Flash Interface (CFI)
- Scaleable Command Set (SCS)
■ 100,000 Block Erase Cycles
■ Enhanced Data Protection Features
- Absolute Protection with VPP = GND
- Flexible Block Locking
- Block Erase/Program Lockout during Power Transitions
■ Configurable x8 or x16 I/O
■ Automation Suspend Options
- Program Suspend to Read
- Block Erase Suspend to Program
- Block Erase Suspend to Read
■ ETOX™ V Nonvolatile Flash Technology -
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