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IXFX55N50 - Brand New IXYS Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IXFX55N50 - Brand New IXYS Field Effect Tube (MOSFET)

In Stock:9108 ,Ready for Immediate Shipping
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In Stock: 9108, Ready for Immediate Shipping
Brand:IXYS
Chipdatas Part No.:CD86-IXFX55N50
Manufacturer Part No.:IXFX55N50
Datecode:09+
Package:TO-247-3
$3.08124 /PCS Each contains 0 PCS
≥1:
$3.08124
≥10:
$3.05042
≥50:
$3.01961
≥100:
$2.92717
Numbers (PCS) :
  • Description

    This is the IXFX55N50 model, a type of Field Effect Tube (MOSFET) electronic component known as HiPerFET™ Power MOSFET. It is a single die MOSFET that comes in international standard packages and has encapsulating epoxy that meets UL 94 V-0, flammability classification. This MOSFET is equipped with features such as a miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, and low package inductance. Its intrinsic rectifier is also fast.

    Specifications and features

    • Product category: Field Effect Tube (MOSFET)
    • Model: IXFX55N50
    • Package: PLUS247
    • Encapsulating material: Epoxy
    • Encapsulating material flame resistance rating: UL 94 V-0
    • Isolation type: Aluminium nitride
    • RDS (on): Low HDMOSTM process
    • Gate cell structure: Rugged polysilicon
    • Switching rating: Unclamped Inductive Switching (UIS)
    • Package inductance: Low
    • Rectifier: Fast intrinsic

    Application Scenarios

    This MOSFET is commonly used for electronic devices that require high power density despite limited space. It can be mounted easily using PLUS247 package for clip or spring bar mounting, thus saving space for other components.

    Comparison

    Advantages
    • High power density
    • International standard packages
    • Encapsulating epoxy with UL 94 V-0 flame resistance rating
    • MiniBLOC with aluminium nitride isolation
    • Low RDS (on) HDMOSTM process
    • Rugged polysilicon gate cell structure
    • Unclamped inductive switching (UIS) rated
    • Low package inductance
    • Fast intrinsic rectifier
    • Space savings due to easy mounting using PLUS247 package
    Disadvantages

    No significant disadvantages have been identified for this model.

  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer IXYS
    Product Category FETs - Single
    Series IXFX55N50
    Packaging Tube
    Unit-Weight 0.257500 oz
    Mounting-Style Through Hole
    Tradename HyperFET
    Package-Case TO-247-3
    Technology Si
    Number-of-Channels 1 Channel
    Configuration Single
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 560 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 45 ns
    Rise-Time 60 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 55 A
    Vds-Drain-Source-Breakdown-Voltage 500 V
    Rds-On-Drain-Source-Resistance 80 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 120 ns
    Turn-On Delay Time 45 ns
    Transconductance 45 S
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
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    • - DHL eCommerce: 12-22 business days
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    • - EMS: 10-15 business days
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Contact us
Additional Information
  • Datasheet: Download IXFX55N50
  • Chipdatas Part: CD86-IXFX55N50
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 08:55 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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