Description

Electronic Component Model: N28F001BX-T150 is an integrated flash memory device designed by Intel. It combines the advantages of standard flash memory with simplified write and block erase features. This innovative alternative to EPROM and EEPROM or battery-backed static RAM offers system designers the convenience of combining the functions of several components into one.

Specifications and features

- One 8 KB Boot Block w/Lock Out

- Two 4 KB Parameter Blocks

- One 112 KB Main Block

- 100,000 Erase/Program Cycles Per Block

- Simplified Program and Erase with Automated Algorithms via On-Chip Write State Machine (WSM)

- SRAM-Compatible Write Interface

- Deep Power-Down Mode with 0.05 mA ICC Typical and 0.8 mA IPP Typical

- 12.0V ± 5% VPP

- High-Performance Read with Maximum Access Time of 70/75 ns, 90 ns, 120 ns, 150 ns

- 5.0V ± 10% VCC

- Hardware Data Protection Feature with Erase/Write Lockout during Power Transitions

- Advanced Packaging options including 32-Pin PDIP, 32-Lead PLCC, and TSOP

- ETOXTM II Nonvolatile Flash Technology with EPROM-Compatible Process Base and High-Volume Manufacturing Experience

- Extended Temperature Options available

Application Scenarios

The N28F001BX-T150 flash memory device can be used in a variety of electronic products and systems where reliable storage and easy reprogramming are needed. It is suitable for applications such as consumer electronics, industrial equipment, automotive systems, and more.

Comparison

- Cost-effective solution compared to EPROM, EEPROM or battery-backed static RAM

- Integration of blocked architecture simplifies system design and reduces component count

- Automated electrical reprogramming enhances flexibility and ease of use

- Standard processor interface allows for seamless integration with existing designs

- None mentioned