IRF9Z10
All product names, trademarks, brands, and logos on this site are the property of their respective owners. Their use is for identification purposes only and does not imply any affiliation or authorization from the rights holders. We are not authorized dealers or distributors of the brand. The warranty is provided by us, not the original manufacturer.
Product Details
Manufacturer
IR
Product Category
FETs - Single
Packaging
Tube
Unit-Weight
0.211644 oz
Mounting-Style
Through Hole
Package-Case
TO-220-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 P-Channel
Pd-Power-Dissipation
43 W
Maximum Operating Temperature
+ 175 C
Operating temperature range
- 55 C
Fall-Time
31 ns
Rise-Time
63 ns
Vgs-Gate-Source-Voltage
20 V
ID (drain current)
6.7 A
Vds-Drain-Source-Breakdown-Voltage
- 60 V
Rds-On-Drain-Source-Resistance
500 mOhms
Transistor-Polarity
P-Channel
Typical-Turn-Off-Delay-Time
10 ns
Turn-On Delay Time
11 ns
Channel-Mode
Enhancement
IRF9Z10 - Brand New IR Field Effect Tube (MOSFET)
Brand:IR
Manufacturer Part No.:IRF9Z10
1+ USD 0.26231
10+ USD 0.25968
50+ USD 0.25706
100+ USD 0.24919
Quantity
Shipping Costs:
Free ShippingEstimated 15-30 business days via Registered Air Mail or othersSee details
Delivery:
Estimated between Wed, Feb 26 and Fri, Feb 28.This item requires 2-5 business days for processing before shipping after payment is confirmed. And depending on the destination and shipping method.See details
Return:60 days returns. Buyer pays for return shipping.See details
Payments:
Shop with confidence
Full Refund if you don't receive your order
Full or Partial Refund , If the item is not as described
One-month free return and one year warranty.
The tension in logistics has eased and normal shipping has resumed. All orders shipments will be sent out within 1-2 days.